DFN5X6HB

Performance Features

• Integrated Half-Bridge: Integrates both high-side and low-side N-channel MOSFETs within a single DFN5x6 package.
• Optimized Internal Layout: Minimizes parasitic inductance between the high-side and low-side switches, enhancing switching performance.
• Low On-Resistance: Utilizes advanced trench technology to achieve low on-resistance (RDS(on)).
• Simplified Drive Circuit: The integrated design reduces the length and complexity of external gate drive traces.

Core Advantages

• Significant PCB Space Savings: Combines two MOSFETs into a single package, reducing the footprint of the power stage.
• Enhanced Switching Performance: The optimized internal layout suppresses voltage spikes and oscillations, improving overall efficiency and reliability.

Key Applications

• Motor Drives: Small brushless DC (BLDC) motor drives, such as fans and water pumps.
• Battery-Powered Devices: Power management for portable devices, drones, and e-bikes.

• BL04N070H
• BL014N04T-TL

• TBL04N070H
• TBLS04NL050H