Galaxy Micro‑Electronics Concludes a Successful Participation at electronica China 2026

Deeply exploring to innovation in power devices,

empowering a future of green energy

— GME successfully concluded the 2026 electronica Shanghai

 

From 1 to 3 July, the 2026 electronica Shanghai kicked off in grand style. GME made a prominent appearance, showcasing the comprehensive array of core products and complete system solutions—encompassing MOSFETs, IGBT, silicon carbide (SiC), gallium nitride (GaN) devices, optocouplers and IPM (Intelligent Power Modules), featured displaying the cutting-edge technological iterations and the robust capabilities in large-scale industrialization within the power semiconductor sector. By leveraging high energy efficiency and high-reliability core devices, GME is dedicated to facilitating the quality enhancement and upgrading of the global green energy industry. This exhibition journey concluded successfully.

During the exhibition, GME precisely focused on hot emerging sectors such as embodied robots, AI data centers, new energy vehicles and photovoltaic energy storage, comprehensively showcasing the diverse, high-performance power semiconductor product portfolio. Leveraging the core competitive advantages of the products—high energy efficiency, low power loss, high stability and long service life—the company continues to put into practice the core development philosophy of ‘making energy conversion more efficient’. Through the robust product capabilities and innovative solutions, it garnered high recognition and widespread attention from numerous industry clients and partners.

The booth witnessed a continuous surge in popularity, with a steady stream of inquiries and negotiations. GME team offered one-on-one exclusive technical consultation to visiting clients, engaging in profound discussions about project requirements, resolving queries, and exploring avenues for collaboration. Concurrently, GME’s technical experts delivered four pivotal technical seminars, centered around four key themes: “Technological Iteration and Large-Scale Adoption of Cost-Effective SiC Devices,” “Efficient Charging Solutions for SiC On-Board OBCs on 800V High-Voltage Platforms,” “New-Generation Motor Drive Solutions Utilizing Highly Integrated IPM Intelligent Power Modules,” and “Application Solutions for High-Performance IGBT Power Modules in Commercial Vehicles” , conducting an in-depth analysis of cutting-edge technological trends within the industry, dissecting the challenges hindering industrialization, and providing the market with cost-effective, highly adaptable, and implementable localized power semiconductor solutions, thereby facilitating cost reduction, efficiency enhancement, and independent, controllable development within the industry.

This exhibition has fully demonstrated GME’s profound technological expertise, the consistent capacity for innovation and iteration, as well as the solid industrialization prowess, thereby further solidifying and elevating the brand influence and market acceptance within the high-end power semiconductor sector. Looking forward, GME will persist in delving deeply into the core domain of power devices, uphold a dual-pronged approach driven by technological innovation and product enhancement, continuously refine green and efficient energy conversion solutions and deepen the strategic deployments in pivotal fields such as artificial intelligence, AI data centers, green energy, automotive electronics, and industrial automation. GME will maintain collaboration with partners throughout the industrial chain, jointly constructing a low-carbon, efficient, and intelligent green energy ecosystem, and empowering the high-caliber, sustainable development of China’s semiconductor industry with the formidable “chip” capabilities.

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产品分类

二极管和整流器

保护器件

双极型晶体管

MOSFETs

模拟IC

光电器件